frequency multipliers - active - chip 2 2 - 38 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc561 gaas mmic x2 active frequency multiplier, 8 - 21 ghz output functional diagram electrical speci cations, t a = +25c, vdd1= vdd2= +5v, 5 dbm drive level typical applications the hmc561 is suitable for: ? clock generation applications: sonet oc-192 & sdh stm-64 ? point-to-point & vsat radios ? test instrumentation ? military & space general description the hmc561 is a x2 active broadband frequency multiplier chip utilizing gaas phemt technology. when driven by a +5 dbm signal, the multiplier provides +17 dbm typical output power from 8 to 21 ghz and the fo and 3fo isolations are 15 dbc at 16 ghz. the hmc561 is ideal for use in lo multiplier chains for pt to pt & vsat radios yielding reduced parts count vs. traditional approaches. the low additive ssb phase noise of -139 dbc/hz at 100 khz offset helps maintain good system noise performance. features high output power: +17 dbm low input power drive: 0 to +6 dbm fo isolation: 15 dbc @ fout= 16 ghz 100 khz ssb phase noise: -139 dbc/hz die size: 1.6 x 0.9 x 0.1 mm parameter min. typ. max. units frequency range, input 4 - 10.5 ghz frequency range, output 8 - 21 ghz output power 14 17 dbm fo isolation (with respect to output level) 15 dbc 3fo isolation (with respect to output level) 15 dbc 4fo isolation (with respect to output level) 15 dbc input return loss 15 db output return loss 12 db ssb phase noise (100 khz offset) -139 dbc/hz supply current (idd) (vdd1= vdd2= +5v, vgg = -1.7v typ.) 98 126 ma *adjust vgg between -2.0 and -1.2v to achieve idd1 + idd2 = 98 ma v02.0809
frequency multipliers - active - chip 2 2 - 39 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc561 output power vs. temperature @ 5 dbm drive level output power vs. supply voltage @ 5 dbm drive level output power vs. drive level gaas mmic x2 active frequency multiplier, 8 - 21 ghz output output power vs. input power isolation @ 5 dbm drive level ssb phase noise performance, fout= 16 ghz, input power = +3 dbm v02.0809 2 4 6 8 10 12 14 16 18 20 22 7 9 11 13 15 17 19 21 23 +25c +85c -55c output power (dbm) frequency (ghz) -10 -5 0 5 10 15 20 7 11151923 -2dbm 0dbm 4dbm 2dbm 6dbm output power (dbm) frequency (ghz) 2 4 6 8 10 12 14 16 18 20 22 7 11151923 4.5v 5.0v 5.5v output power (dbm) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 7 11151923 f0 2f0 3f0 4f0 output power (dbm) frequency (ghz) -15 -10 -5 0 5 10 15 20 25 -5 -2 1 4 7 10 8ghz 14ghz 20ghz output power (dbm) input power (dbm) -180 -150 -120 -90 -60 -30 0 10 2 10 3 10 4 10 5 10 6 10 7 ssb phase noise (dbc/hz) offset frequency (hz)
frequency multipliers - active - chip 2 2 - 40 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc561 gaas mmic x2 active frequency multiplier, 8 - 21 ghz output v02.0809 absolute maximum ratings rf input (vdd1= vdd2= +5v) +10 dbm supply voltage (vdd1, vdd2) +5.5 vdc channel temperature 175 c continuous pdiss (t= 85 c) (derate 10.4 mw/c above 85 c) 940 mw thermal resistance (channel to ground paddle) 95.9 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c typical supply current vs. vdd1, vdd2 vdd1, vdd2 (vdc) idd1 + idd2 (ma) 4.5 97 5.0 98 5.5 99 note: multiplier will operate over full voltage range shown above. electrostatic sensitive device observe handling precautions input return loss vs. temperature output return loss vs. temperature supply current vs. input power -20 -16 -12 -8 -4 0 7 9 11 13 15 17 19 21 23 +25c -55c +85c return loss (db) frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 3456789101112 +25c +85c -55c return loss (db) frequency (ghz) 70 75 80 85 90 95 100 105 110 115 120 125 130 -10-8-6-4-20246810 idd (ma) input power (dbm)
frequency multipliers - active - chip 2 2 - 41 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc561 gaas mmic x2 active frequency multiplier, 8 - 21 ghz output v02.0809 outline drawing pin number function description interface schematic 1, 4, 8 gnd die bottom must be connected to rf ground. 2 rfin pin is ac coupled and matched to 50 ohms. 3vgg gate control for multiplier. adjust to achieve idd of 98 ma. please follow mmic ampli er biasing procedure application note. 5, 6 vdd1, vdd2 supply voltage 5v 0.5v. 7 rfout pin is ac coupled and matched to 50 ohms. pin description notes: 1. all dimensions are in inches [millimeters]. 2. die thickness is .004 3. typical bond pad is .004 square. 4. typical bond spacing is .006 center to center. 5. bond pad metalization: gold 6. backside metalization: gold 7. backside metal is ground. 8. no connection required for unlabeled bond pads. die packaging information [1] standard alternate [2] gp-2 (gel pack) [1] refer to the packaging information section for die packaging dimensions. [2] reference this suffix only when ordering alternate die packaging.
frequency multipliers - active - chip 2 2 - 42 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc561 gaas mmic x2 active frequency multiplier, 8 - 21 ghz output v02.0809 assembly diagram
frequency multipliers - active - chip 2 2 - 43 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc561 gaas mmic x2 active frequency multiplier, 8 - 21 ghz output v02.0809 mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) th ick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. an rf bypass capacitor should be used on the vdd input. a 100 pf single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 mils) from the chip is recommended. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. c and a tool temperature of 265 deg. c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. c. do not expose the chip to a temperature greater than 320 deg. c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 deg. c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire 3 mil ribbon bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic ribbon bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab
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